- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/11573 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by the peripheral circuit region
Patent holdings for IPC class H01L 27/11573
Total number of patents in this class: 2050
10-year publication summary
|
19
|
89
|
209
|
211
|
321
|
400
|
361
|
308
|
205
|
17
|
| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Samsung Electronics Co., Ltd. | 131630 |
523 |
| Sandisk Technologies LLC | 5684 |
252 |
| Kioxia Corporation | 9847 |
242 |
| Yangtze Memory Technologies Co., Ltd. | 1940 |
195 |
| Micron Technology, Inc. | 24960 |
179 |
| SK Hynix Inc. | 11030 |
177 |
| Renesas Electronics Corporation | 6305 |
76 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
65 |
| Monolithic 3D Inc. | 270 |
52 |
| Macronix International Co., Ltd. | 2562 |
29 |
| Longitude Flash Memory Solutions Ltd. | 297 |
27 |
| Sunrise Memory Corporation | 192 |
21 |
| United Microelectronics Corp. | 3921 |
20 |
| Infineon Technologies LLC | 597 |
18 |
| Intel NDTM US LLC | 373 |
13 |
| Lodestar Licensing Group LLC | 583 |
12 |
| Semiconductor Energy Laboratory Co., Ltd. | 10902 |
10 |
| Tokyo Electron Limited | 11599 |
8 |
| Toshiba Memory Corporation | 255 |
7 |
| International Business Machines Corporation | 60644 |
6 |
| Other owners | 118 |